Physica status solidi / A. / September 16

Frontmatter — Nina Aleksandrovna Goryunova — Contents — Review Article — Correlations between Active and Passive Parameters of Solid State Laser Media (II) — Original Papers — The Validity of Matthiessen’s Rule in Dilute Al Alloys in the Vicinity of Room Temperature — Radiation Defects in Fast-Neutron Irradiated High-Purity Silicon — Propriétés photoélectriques de cellules au sulfure de cadmium en fonction du dopage — Peculiarities in the Structure and Origin of Localized States Responsible for the Photoelectret State in A VB3VII-Type Layer Crystals — Effect of Atomic Hydrogen and Oxygen on Changes in the Surface Conductance and Work Function of the Clean (111) Germanium Surface — Absorption optique de l’arseniure de gallium de type n entre 0,6 et 1,3 eV — Point Defect Associates and Inhomogeneity Effects in Deformed Germanium — Electron Emission from Heterogeneous Metal Surfaces — Frequency Dependence of the Conductivity in Monocrystalline Selenium — The Influence of Domain Wall Bowing on Eddy Current Drag — Ion Bombardment of H.C.P. and F.C.C. Cobalt in the Electron Microscope — The Characteristics of the 0.93 to 1.0 eV Luminescence Bands in GaAs — Properties of Self-Ion Irradiated Thin Films — Thermal Conductivity of Triglycine Sulfate near the Curie Point — Cathodochromic and Photochromic Alkali Halide Crystals for Optical Information Storage — On the Dynamical Behaviour of Weakly Doped Photosensitive Crystals — Change of Magnetic Reversal in Exchange Coupled Magnetic Films — Gleichstromkennlinien und Schaltverhalten bei ortsabhängiger Lebensdauer — Precipitation of Impurities into Silicon — Intermetallic Compounds of Rare Earth Elements and Ni, Co, or Fe — Experimental Proof that the Generation of Periodic Transients in ß-Carotene Single Crystals, under the Influence of Applied Electric Fields, is a Bulk Phenomenon — Précipitation de titane dans le système titane-carbone-oxygène — Phase Transition in Divalent Metal Dicalcium Propionates Substituted Partially by Acetate Ions — Doping Dependence of the Internal Quantum Efficiency of Spontaneous Electron-Hole Recombination in n-Type Samples of GaAs Excited by a 30 kV Electron Beam at 300 °K — Electroluminescence in ZnO Electroluminophor Systems — The Growth Mechanism of Precipitates in Al-Mg-Si Alloys — Anomalous Electrical and Magnetic Changes in Cu-Cr Base Alloys during Precipitation — Temperature Dependence of the Plow Stress in Secondary Glide Planes of Cadmium Single Crystals — Anomalous Photovoltage in Insulating GaSe Crystals — Influence of External Perturbations on the Behaviour of Stationary Electrical Domains in Gold-Doped n-Type Ge — Compression of Corundum Single Crystals at Elevated Temperatures — On the Structure of Internally Oxidized Alloys — Erratum — Erratum — Short Notes — Introduction — Weak Beam Observation of Dislocation Loops in Silicon — Grain Boundary Diffusion of Molybdenum in Tungsten — On the Formation of Thin Film Single Crystals of Gadolinium Monoxide — Electrical Properties of n-CdSnP2— p-Cu2S Heterojunctions — Influence of the Second Harmonic on the Acousto-Electric Gain in Piezoelectric Semiconductors1 — Thin Film MIS Varactor — Photoluminescence in y -Irradiated Vitreous and Monocrystalline As2S3 and As2Se3 — Activation Energy for the Motion of Dislocations in Molybdenum — Matteucci Effect in Ni3Mn — Magnetostriction from Tetrahedral Site Ni2+Ions in NiFe2O4 Crystals — Average Magnetization of Fe-Al Alloys — Thermal Conductivity of Iron in the Temperature Range from 0. 5 to 1. 3 °K — Calculation of the Solubility Limits in Dilute Beryllium Alloys — Magnetic Studies on TbFeAl — On the Creep of Crystals — Pre-printed Titles