Physica status solidi / A. / December 16

Frontmatter — Contents — Original Papers — Structure; crystallography — An Investigation of Fast Neutron Irradiation Effects on the Structure of Cu50Ti50 Metallic Glass — The Simulation of Modulated J8 Fringes in an X-Ray Section Topograph of a Stacking Fault — Computer Simulation of the Early Stages of Ordering in Ni-Mo Alloys — Structure Factor Computation of RbCl and RbBr — Interpretation of Interference Patterns Obtained from X-Ray taue Interferometers in Primary Plane Waves — High Resolution Electron Microscopic Study of Silver Sulfide Microcrystals Formed on Silver Bromide Emulsion Grains — Study of Special Triple Junctions and Faceted Boundaries by Means of the CSL Model — Defects; nonelectronic transport — Properties of Proton Exchanged Optical Waveguiding Layers in LiNbO3 and LiTaO3 — Peculiarities of Radiation Defect Accumulation under High-Flux y-Ray and Electron Irradiation of Silicon — Characterization of Defects in Deformed Titanium — Diffusivity of Oxygen in the Orthorhombic YBa2Cu3OyPhase — Carbon-Vacancy Interactions in B.C.O. Iron — Lattice properties — Microwave and Ultrasonic Investigations of Superionic Phase Transitions in CsDSO4 and CsDSeO4 — Propagation of Plane Elastic Waves in LiCsSO4 Single Crystals — The Band Structure and the Anomalous Alloying Behavior of Noble Metal Based Systems — Comparison between Experimental Determination and Calculation of Elastic Properties of Nickel-Base Superalloys between 25 and 1200 °C — Ferroelastic Phase Transition in LiRb4H(S04 ) 3 • H2S — High-Pressure Raman Spectroscopic Study of the Ice Ih -»• Ice IX Phase Transition — Effect of Loading on the Recovery of Internal Friction of an Al-1.0 wt%Mn-0.28 wt%Fe Alloy — Surfaces, interfaces, thin films; lower-dimensional systems — Relaxation Kinetics of a Non-Equilibrium Interface of a Multicomponent Liquid Phase-Binary Substrate on the Example of In-Ga-As/InAs System — Surface Composition of the Ordered Fe-Co Alloys — Pt2Al3 Formation on Evaporated and Large-Grained Al Substrates — The Influence of Strain and Dislocations on Transport Properties of GaAs/Si Strained-Layer Heterojunctions — Experimental Study of Oxygen Effect on the Variation of Resistivity with Temperature for Poly crystalline Selenium Thin Films — High Temperature Metallisation for GaAs Device Processing — Charge Injection into Si02 Films at Fields between 1 and 3 MY cm-1 after Electrical Stress — Resistivity Increase in Thin Conducting Films Considering the Size Effect — Electronic transport; superconductivity — Self-Generated Chaos in n-Ge after Electron Irradiation — The Photoplastic Effect in II-VI Compounds Mercury Cadmium Telluride — Electrical and Optical Properties of n- and p-Type CuInTe2 — A Method for Measuring the Resistivity of a Layered Semiconductor Perpendicular to the Layers — Mircowave Conductivity and Thermoelectric Power of Some Ternary Salts of TCNQ and Iodine — Magnetic properties; resonances — Thermal Properties of Ndln3 — MgO Powder Containing Low Concentrations of Isotopically Pure 52Cr 3+ Ions Its Application as ESR Marker — Dielectric and optical properties — Fundamental Optical Absorption Edge in MnGa2Te4 Single Crystals — Uniaxial Stress-Effect on Visible and Near-Infrared Absorption Spectra of Si(phthalocyaninato) (0H)2 Epitaxial Films — Fundamental Absorption Edge in Bismuth-Vanadate Glasses — Device-related phenomena — Measuring on Thin Film Electroluminescent Devices — A Method to Determine Surface Doping and Substrate Doping Profile of n-Channel MOSFETs — Recovery Mechanism of Lattice Defects Formed in the Collector Region for Electron-Irradiated npn Si Transistors — Transients in p +? n+ Photodiodes — Short Notes — Diffusion of Impurities from Implanted Silicon Layers by Rapid Thermal Annealing — A Study of Structural Relaxation in Glassy Pd 77.5 Cu 6.0 Si 16.5 by Microcalorimetric Measurements — Comments on the Results of Dilatometric Studies of NH4HSeO4 Cryst